AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF21085LR3 MRF21085LSR3
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
= 100
μAdc)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 200
μAdc)
VGS(th)
2
?
4
Vdc
Gate Quiescent Voltage
(VDS
=28Vdc,ID
= 1000 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2Adc)
VDS(on)
?
0.18
0.21
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=28Vdc,VGS
=0,f=1.0MHz)
Crss
?
3.6
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3
measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common--Source Amplifier Power Gain
(VDD
=28Vdc,Pout
=19WAvg.,IDQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
12
13.6
?
dB
Drain Efficiency
(VDD
=28Vdc,Pout
=19WAvg.,IDQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
20
23
?
%
Third Order Intermodulation Distortion
(VDD
=28Vdc,Pout
=19WAvg.,IDQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 --10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
?
--37.5
-- 3 5
dBc
Adjacent Channel Power Ratio
(VDD
=28Vdc,Pout
=19WAvg.,IDQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 --5 MHz and f2 +5 MHz.)
ACPR
?
-- 4 1
-- 3 8
dBc
Input Return Loss
(VDD
=28Vdc,Pout
=19WAvg.,IDQ
= 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
?
-- 1 2
-- 9
dB
1. Part is internally matched both on input and output.
(continued)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF281ZR1
IC MOSFET RF N-CHAN NI-200Z
MRF282SR1
IC MOSFET RF N-CHAN NI-200S
MRF372R3
IC MOSFET RF N-CHAN NI-860C3
MRF373ALSR5
MOSFET RF N-CHAN 32V 75W NI-360S
MRF374A
IC MOSFET RF N-CHAN NI-650
MRF377HR3
MOSFET RF N-CHAN 32V 45W NI-860C
MRF5P20180HR6
MOSFET RF N-CHAN 28V 38W NI-1230
MRF5P21045NR1
MOSFET RF N-CH TO-270-4
相关代理商/技术参数
MRF21085LSR3_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF21085LSR5
功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF21085R3
制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF21085SR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF21090
制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, RFMOD
MRF21090R3
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF21090R3_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF21090SR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors